Photoelectric parameters of the heterojunctions ITO-CdGeP2
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Auteurs : RBID : ISTEX:11182_1989_Article_BF01102540.pdfAbstract
Photosensitive n-n and n-p structures based on CdGeP2 crystals and layers of indium and tin oxides were prepared by the method of reactive cathodic sputtering. The photoelectric properties of the structures in natural and linearly polarized light were studied, and the temperature dependence of the photosensitivity in the interval 80–400 K was also measured. The polarization parameters of heterojunctions were determined, and the results were analyzed based on a model of the band spectrum and the selection rules for interband transitions in CdGeP2. It is shown that n-n heterojunctions can be employed as polarimetric photodetectors.
DOI: 10.1007/BF01102540
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Ioffe Physicotechnical Institute, Academy of Sciences of the USSR</wicri:regionArea><wicri:noRegion>Academy of Sciences of the USSR</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="RBID">ISTEX:11182_1989_Article_BF01102540.pdf</idno><date when="1989">1989</date><idno type="doi">10.1007/BF01102540</idno><idno type="wicri:Area/Main/Corpus">000661</idno><idno type="wicri:Area/Main/Curation">000661</idno><idno type="wicri:Area/Main/Exploration">000473</idno></publicationStmt></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="eng">Photosensitive n-n and n-p structures based on CdGeP2 crystals and layers of indium and tin oxides were prepared by the method of reactive cathodic sputtering. The photoelectric properties of the structures in natural and linearly polarized light were studied, and the temperature dependence of the photosensitivity in the interval 80–400 K was also measured. The polarization parameters of heterojunctions were determined, and the results were analyzed based on a model of the band spectrum and the selection rules for interband transitions in CdGeP2. It is shown that n-n heterojunctions can be employed as polarimetric photodetectors.</div></front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="71db0b5b4dcc09299fa3adc89dbd50138f47ba1c"><titleInfo lang="eng"><title>Photoelectric parameters of the heterojunctions ITO-CdGeP2</title></titleInfo><name type="personal"><namePart type="given">A. V.</namePart><namePart type="family">Lunev</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>A. F. Ioffe Physicotechnical Institute, Academy of Sciences of the USSR, USSR</affiliation></name><name type="personal"><namePart type="given">Yu. 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Ioffe Physicotechnical Institute, Academy of Sciences of the USSR, USSR</affiliation></name><typeOfResource>text</typeOfResource><genre>Original Paper</genre><originInfo><publisher>Kluwer Academic Publishers-Plenum Publishers, New York</publisher><dateCreated encoding="w3cdtf">1986-08-04</dateCreated><dateValid encoding="w3cdtf">2005-01-20</dateValid><copyrightDate encoding="w3cdtf">1989</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="eng">Photosensitive n-n and n-p structures based on CdGeP2 crystals and layers of indium and tin oxides were prepared by the method of reactive cathodic sputtering. The photoelectric properties of the structures in natural and linearly polarized light were studied, and the temperature dependence of the photosensitivity in the interval 80–400 K was also measured. The polarization parameters of heterojunctions were determined, and the results were analyzed based on a model of the band spectrum and the selection rules for interband transitions in CdGeP2. 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